1. Open Access Kent State
  2. Eliminating Layer Undulation Textures in SSFLC Devices
Author(s)
Abstract

Temperature dependence of the smectic layer structures was studied by high resolution X-ray diffraction analysis. The investigation was based on two different alignment SSFLC cells. The effect of layer spacing changes in the SmA phase on defects seen in the SmC phase of the devices is investigated. It is shown that when considering a defect free SmC* texture, the layer spacing changes in the SmA phase are more significant than changes in the SmC phase. An explanation is also proposed.
Format
Article
Identifier(s)
10.1889/1.1832349
Publication Date
2003-05-01
Publication Title
SID Symposium Digest of Technical Papers
Volume
34
Issue
1
First Page
608
Last Page
611
Subject
Rights
http://rightsstatements.org/vocab/InC/1.0/
Community
Department of Physics
Permalink https://oaks.kent.edu/article/eliminating-layer-undulation-textures-ssflc-devices
Wang, C., Bos, P., Kumar, S., Wand, M., & Handschy, M. (2003). Eliminating Layer Undulation Textures in SSFLC Devices (1–). SID Symposium Digest of Technical Papers. https://doi.org/10.1889/1.1832349
Wang, Chenhui, Philip Bos, Satyendra Kumar, Michael Wand, and Mark Handschy. 2003. “Eliminating Layer Undulation Textures in SSFLC Devices”. SID Symposium Digest of Technical Papers. https://doi.org/10.1889/1.1832349.
Wang, Chenhui, et al. Eliminating Layer Undulation Textures in SSFLC Devices. SID Symposium Digest of Technical Papers, 1 May 2003, https://doi.org/10.1889/1.1832349.