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Andrew Shepherd Banner ID: 810962517 Dr. Bjorn Lussem, Physics Department Email : blussem@kent.edu Measuring Organic Field-Effect Transistors Organic field-effect transistors (OFET’s) are of growing interest in the fields of physics and electronics for many reasons. Not only do OFET’s have the ability to be more cost-effective than traditional transistors, they are also very flexible. The flexibility of these transistors creates a wide array of applications for real-world use. OFET’s can be doped with other materials in order to increase the performance of the device. In Dr. Lussem’s lab, doped OFET’s are processed and measured, with electron mobility of specific interest. The transistors are processed by sublimating the materials onto a glass plate, layer by layer. The transistor is moved to the glovebox, where measurements are done to find the electron mobility. Within the pressurized glovebox, a voltage is applied across the transistor. Sensors are connected to a computer program that creates and plots the data points. This data can be analyzed to calculate the electron mobility. The specific compound being measured is DNTT (dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]- thiophene). DNTT is of interest because of other reports being published recently, citing remarkable electron mobility. This high mobility must be corroborated, which is the main reason that this project of processing and measuring DNTT OFET’s was undertaken.
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Faculty Mentor
Bjorn Lussem |
| Modified Abstract |
Andrew Shepherd Banner ID: 810962517 Dr. Bjorn Lussem, Physics Department Email : blussem@kent.edu Measuring Organic Field-Effect Transistors Organic field-effect transistors (OFET’s) are of growing interest in the fields of physics and electronics for their flexibility and low production cost, which creates a wide array of real world applications. The doped OFET’s are processed and measured, with electron mobility of specific interest. The transistors are processed by sublimating materials onto a glass plate, layer by layer. Measurements are taken within a pressurized glovebox, looking for high electron mobility. A voltage is applied across the transistor, and a computer program provides data points and graphs about the transistor. This data can be analyzed to calculate the electron mobility. The specific compound being measured is DNTT. DNTT is of interest because of other reports being published recently, citing remarkable electron mobility. This high mobility must be corroborated, which is the main reason that this project of processing and measuring DNTT OFET’s was undertaken. |